Hi, Canes,=0A=0AHspice is a general circuit simulator, if you have device m= odels which model their behavior under ESD event sufficiently, then buildin= g your (ESD stimulus+ESD protection Device or ESD protection Network, inclu= ding the Package/loading/parasitic RCs) and simulation will give you some i= nsight on whether the ESD Spec can be met.=0A=0AA lot of time, the models f= or your ESD device are not included, or poorly modeled. Here the T-CAD can = offer the help before you see the silicon, it can predict the I-V character= istic of the ESD device. based on the T-CAD results, you can either write a= AMS model or Spice Marcro-model to simulation in Hspice.=0A=0AGenerally, t= hings to look for:=0AResistance of ESD path=0ACurrent handling capability o= r EM compliance for the Metal wire/Contact=0AVoltage the gate of core logic= transistor sees during ESD event to ensure the reliability of the transist= or=0Aetc..=0A=0A=0ABest=0A=0AYafei=0A=0A----- Original Message ----=0AFrom:= Canes Venatici <starsilic@xxxxxxxxx>=0ATo: vats123@xxxxxxxxx; si-list@free= lists.org; si-list@xxxxxxxxxxxxx=0ACc: yafei_bi@xxxxxxxxx=0ASent: Tuesday, = November 28, 2006 11:14:21 PM=0ASubject: [SI-LIST] Re: ESD simulations=0A= =0AThanks for all responses,=0ASrivats Partha,=0AI agree with you. If we ha= ve to design ESD protection for a circuit, we need to do get the characteri= stics=0Ain those regions and that helps in optimizing the protection circui= t parameters. If I'm wrong please correct it.=0ABut since the I/O pads does= have the ESD protection circuits, we can still simulate them using HSPICE.= =0AAs the protection devices responds to the ESD pulses, we may need to fi= nd whether they did the =0Acorrect job (How to quantify it?, Thats exactly= my question). =0AAs per (A Chip-level Electrostatic Discharge Simulation S= trategy) paper, they suggest to check the voltage at the nodes of clamping = paths, whether they exceeded the threshold (I don't know what value we can = assume). =0AI feel from any pin to any pin the resistance should be within = some threshold during ESD (HBM/MM/CDM)=0A(I don't know how to have a reason= able value, probably its given for a technology from vendors for their I/Os= ).=0A=0A=0AYafei Bi,=0AActually we have the model files containing ESD effe= cts. But whats the parameter we can look to tell,=0Awhether it is passed/fa= iled. Also test modes like PS,PD,NS,ND PALL,NALL,PDS,NDS PC,NC tells how = can we test after manufacturing.=0ABut I need before silicon, how can we ge= t the ESD performance for whole chip (I/O pads + Package effects), probably= not CDM now, =0Aas core logic is under design phase.=0A=0ARegards=0ACanes= =0A=0AFrom: Srivats Partha <vats123@xxxxxxxxx>=0A=0AHello ppl=0AI feel hspi= ce wll not allow you to simulate the ESD compliance of a I/O pad.The reason= being HSPICE will not simulate a MOSFET beyond the saturation region. Usin= g HSPICE only the linear and saturation regions of a MOSFET can be simulate= d. But to verify the ESD complaince MOSFET characteristics beyond satur= ation in break down and snap back needs to be studied. The lateral PNP BJT = formed after the MOSFET breakdown needs to be studied. I am not sure if the= re is a method to study this unless yu do the simulations with a MOSFET and= a PNP transistor connected. You may also have to model the current source= which depicts the Avalanche characteristics. Thats how we are looking to = study the ESD characteristics in our lab. I hope my explanation is on the r= ight track. Else you might have to use simulators which study MOSFET behav= ior in the high current , voltage region. I wud very interested to know if = there are other methods to do this.=0A=0A=0A=0AFrom: Yafei Bi <yafei_bi@yah= oo.com>=0A=0A=0Aif you have the device model for the ESD protection devices= /network, then you =0Acan build the test benches for ESD event(HBM, CBM etc= .), and simulate ESD =0Aevent/compliance in HSpice. That will give you some= idea on whether the I/O =0Adesign can meet the ESD requirement or not.=0AI= f you don't have ESD device model, then you have to use T-CAD to generate t= he I-V characteristic =0Aof the protection devices. Hopely you can do the s= ame experiment on the device and =0Asee the difference.Eventually, ESD test= on silicon is the final proof.=0Abest,=0AYafei=0A=0A=0A=0A=0A=0A=0A=0A____= ______________________________________________=0ADo You Yahoo!?=0ATired of = spam? Yahoo! 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