[SI-LIST] ESD Structure in IBIS
- From: "Timothy Coyle" <Timothy.Coyle@xxxxxxx>
- To: si-list@xxxxxxxxxxxxx
- Date: Fri, 9 Aug 2002 10:19:46 -0400
Hi,
I am trying to obtain a ground clamp curve of an input through simulation
for IBIS. The issue I'm having is at -Vcc my current is -200A, which
might not be correct.
I have some characterization data of the actual part, which includes some
Clamp Current Data. So forcing a current of 18mA I get a voltage of .53V.
When I look
at my simulated ground clamp curve, at - .5V I roughly have -18mA of
current. It seems the ground clamp curve is accurate for the operating
region of the device
(-.5V to 2.5V), but beyond that I'm not understanding what's going on.
(Not sure either if it is accurate to use this one data point for
correlation)
The ESD structure is a grounded gate MOSFET architecture, which I am not
that familiar with. My simulation setup is sweeping the input, leaving the
output floating,
and applying voltage to power pin.
For input clamp diode ESD structures, in the past I've added a small
resistor to compensate for the ideal diode. Do I need to do the same
compensation
for the grounded gate MOSFET structure?
How are other people correlating their ground clamp curves for the
required full IBIS sweep? Can I get this data from a curve tracer without
blowing up the part?
Regards,
Tim
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