[SI-LIST] Re: copper-to-copper separation
- From: "Jackson, T L" <t.l.jackson@xxxxxxxx>
- To: "'ikhan@xxxxxxxxxxxxxxxxxxx'" <ikhan@xxxxxxxxxxxxxxxxxxx>,si-list@xxxxxxxxxxxxx
- Date: Fri, 02 Aug 2002 10:30:36 -0700
According to my notes from Lee Ritchey's class, the dielectric breakdown
voltage, DBV, of standard FR-4 is 1100 Volts/mil.
So, it seems to me that you need, at least, 1.4 mils copper-to-copper
spacing on the inner layers. The outer layers dielectric strength would
also be a function of the DBV of the soldermask. So, you probably need
more.
TJ
Thomas L. Jackson, PE
Staff System Engineer
L1-50, Remote Sensing Systems Engineering
Missiles and Space Operations
Lockheed Martin Space Systems Company
telephone: (408) 742-2013
facsimile: (408) 742-7701
location: B149/E2
-----Original Message-----
From: Ibrahim Khan [mailto:ikhan@xxxxxxxxxxxxxxxxxxx]
Sent: Friday, August 02, 2002 10:11 AM
To: si-list@xxxxxxxxxxxxx
Subject: [SI-LIST] copper-to-copper separation
Hello si Gurus,
Anyone has a reliable data on what should be the copper-to-copper
separation for outer layers and inner layers (FR4) to run a 1500V
highpot test.
Thanks
Ibrahim Khan
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