[SI-LIST] Advice needed for how to make my PCB thicker

  • From: Henrik Gildå <henrik@xxxxxxxxxxxxxxxxxxx>
  • To: si-list@xxxxxxxxxxxxx
  • Date: Wed, 02 Mar 2011 23:03:00 +0100

Hello SI-gurus!

As a hobby project I've designed my own graphics card because I wanted 
to. :)  Among other things it features a six layer board and the 
protypes seem to work very well, but the PCB is only 1mm thick. I've 
realized that I need to make it thicker before I produce it to a 
selected few who have expressed interest in buying it. I've been 
thinking about two ways to make the board thicker and hope I can get 
some input from you about what I might have missed regarding the pros 
and cons for the two alternatives. :)

This is what the stackup looks like today:

--- TopSignal     (Features Spartan3 in BGA, two DDR2 memories at 
200MHz, DVI transmitter chip with impedance matched routings, DAC at 240MHz)
--- 66um FR-4
--- TopGND     (several digital GND planes, DC/DC GND, analog GND)
--- 250um FR-4
--- MidPower  (1.2V for FPGA, 3.3V, 2.5V, 1.8V, 5V)
--- 230um FR-4
--- MidSignal  (some DDR address signals impedance matched with signals 
on top and bottom layer, as well as some extra power planes that 
wouldn't fit in MidPower)
--- 250um FR-4
--- BottomGND  (digital GND, DC/DC GND, analog GND)
--- 66um FR-4
--- BottomSignal     (Features Spartan3 core decoupling caps, DDR2 data 
lines with controlled impedance, etc)

Now I have come up with two alternatives to make this stackup thicker:
1) Increase the 250um between the TopGND-MidPower and 
MidSignal-BottomGND layer pairs to 550um each. This way I keep the 
concept of tight layer pairs at the top, middle and bottom.
2) Instead increase the distance between the MidPower and MidSignal 
layers a lot and decrease the 250um parts to 66um. This way I get three 
layers packed tightly at the top (TopSignal, TopGND, MidPower) and three 
layers packed tightly at the bottom (MidSignal, BottomGND, BottomSignal).

In the first alternative this would increase the impedance of the DDR 
address signals in the MidSignal layer by around 10% according to my 
calculations.

In the second alternative I think I would get even better high-frequency 
performance out of the power supply planes (MidPower) because the ground 
plane (TopGND) is so close. But the components and caps on the bottom 
layer would have very long vias to reach the power plane.

Any thoughts about this would be greatly appreciated. :)

Regards
Henrik


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