Dear SI gurus, Recently, I read an article regarding IBIS model generation. In this article, it says for pure CMOS design if specified at 3.3V (nominal), the maximum conditions will be VCC=3.6V and temperature = -40C, the minimum conditions will be VCC=3.0V and temperature = 85C. Bipolar design if specified at 5V (nominal), the maximum conditions will be VCC=5.5V and temperature = 85C (not -40C in above case) the minimum conditions will be VCC=4.5V and temperature = -40C (not 85C in above case) "CMOS,Bipolar and BI-CMOS processes each have unique characteristics that determine these performance conditions." said in the article. Can somebody shed some light on it? Why do they have different temperature defined for maximum and minimum conditions? What is for BI-CMOS? Thank you for your comments in advance. >8-) John Lin Senior SI Engineer, Server Team, ARD4 Quanta Computer Inc.,Taiwan, R.O.C. Email: John@xxxxxxxxxxxx Tel: 886+3+3272345 ext. 5183 ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List archives are viewable at: //www.freelists.org/archives/si-list Old list archives are viewable at: http://www.qsl.net/wb6tpu