[SI-LIST] Temperature vs. performance in different type of processes.
- From: =?big5?b?Sm9obiBMaW4gKKpMtMK31yk=?= <John@xxxxxxxxxxxx>
- To: si-list@xxxxxxxxxxxxx
- Date: Wed, 11 Jul 2001 18:56:29 +0800
Dear SI gurus,
Recently, I read an article regarding IBIS model generation. In this
article, it says for pure CMOS design if specified at 3.3V (nominal),
the maximum conditions will be VCC=3.6V and temperature = -40C,
the minimum conditions will be VCC=3.0V and temperature = 85C.
Bipolar design if specified at 5V (nominal),
the maximum conditions will be VCC=5.5V and temperature = 85C (not -40C in
above case)
the minimum conditions will be VCC=4.5V and temperature = -40C (not 85C in
above case)
"CMOS,Bipolar and BI-CMOS processes each have unique characteristics that
determine these
performance conditions." said in the article.
Can somebody shed some light on it? Why do they have different temperature
defined for maximum and minimum conditions? What is for BI-CMOS?
Thank you for your comments in advance. >8-)
John Lin
Senior SI Engineer, Server Team, ARD4
Quanta Computer Inc.,Taiwan, R.O.C.
Email: John@xxxxxxxxxxxx
Tel: 886+3+3272345 ext. 5183
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