[SI-LIST] Re: diffusion capacitance measurement
- From: Raymond.Leung@xxxxxxxxxxx
- To: si-list@xxxxxxxxxxxxx
- Date: Thu, 15 Jul 2004 14:26:43 +1000
The first suggestion goes back to my previous claim that the
hand-calculated Cj and Cjsw is not accurate since:
1) you don't know the doping profiles,
2) you don't know the equivalent junction depth,
3) you don't know the doping density, and
4) other channel implants may affect the effective
doping profiles.
Even if you can find the overall capcitance of the node, how
can you tell the portions from Cj, Cjsw and overlap cap
from the drain to the gate?
Regards,
Raymond
Yafei Bi <yafei_bi@xxxxxxxxx> on 15/07/2004 14:09:03
Please respond to yafei_bi@xxxxxxxxx
To: Raymond Leung/sdc@sdc, si-list@xxxxxxxxxxxxx
cc:
Subject: [SI-LIST] Re: diffusion capacitance measurement
Ashvin,
Sounds like you already have the transistor model
files, so this is how I would do:
1). for a hand calculation, look at Hspice model file
for MOS parameter CJ and CJSW, those are bottom plate
and sidewall capacitance.
2). for a simulation, apply an AC voltage source at
the nodes(e.g.: drain/source), run .ac simulation,
probe the ac current goes into the nodes. the
impedance of nodes can be calaculated as:
R=V/I, I is your ac current.
impedance R=1/(2*pi*f*c).
you know the frequceny at which the current is
measured, so: c = I/(2*pi*f*V).
you can verify whether the simulation results matches
the hand calculation.
Alternatively, I agree with Raymond, just ask your
foundary, their documentation should have these number
readily.
Regards,
Yafei
--- Raymond.Leung@xxxxxxxxxxx wrote:
>
>
> Ashvin,
>
> You cannot calculate the area/perimeter diffusion
> capacitances
> accurately because they are very process dependent.
> There is a way
> to measure them out from the test devices which are
> specially
> designed for this purpose, but I don't think the
> faundry will let you
> do it yourself. Perhaps the best way is to ask your
> faundry for the
> figures.
>
> Regards,
> Raymond
>
>
>
>
>
> "ashvin khole" <ashvinkhole@xxxxxxxxxxx> on
> 14/07/2004 22:51:23
>
> Please respond to ashvinkhole@xxxxxxxxxxx
>
> To: si-list@xxxxxxxxxxxxx
> cc: (bcc: Raymond Leung/sdc)
>
> Subject: [SI-LIST] diffusion capacitance
> measurement
>
>
>
> Hi Can someone guide me to the appropriate way to
> measure area and
> perimeterdiffusion capacitance for a transistor
> model both by simulation and
> hand calculation? I have the appropriate model files
> for the transistor
> model. Thanks Ashvin
>
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