[SI-LIST] Re: Power dissipation- Ambient temperature

  • From: Adeel AHMAD <adeel.ahmad@xxxxxx>
  • To: prasannar@xxxxxxxxxxxxxxx
  • Date: Tue, 17 Feb 2004 13:58:43 +0530

Hello,

The term 'Power dissipation ' is often intechangably used for Instantaneous
Power dissipation and Average power dissipation.
If it is used as Instantaneous Power dissipation, it is power(V*I) at each
point of time rather than for a period of time.
If it is used as Average Power dissipation(it is a more meaningful
parameter) it may be put as-average of instantaneous power dissipation
during a given time-interval.

Now, in your case, if temperature is increasing, the Instantaneous Power
dissipation increases along time axis, also resulting in increase in Average
Power dissipation during a time interval when compared with Instantaneous &
Average power dissipations if temperature remained constant. So the time
factor dependence on "power dissipation" comes into picture in any case of
temperature change with time i.e. Instantaneous and Average Power
dissipations increase.

This is what comes to my mind regarding your question.

regards
Adeel

"Prasanna R - CTD, Chennai." wrote:

> Hello,
>         Power dissipation of CMOS, Bi-CMOS, TTL devices depend on ambient
> temperature.
> Power dissipation of these devices will increase the temperature around
> these devices.
> So, power dissipation increases with time as the temperature around it is
> increasing.
> But power dissipation is calculated independent of time. Please explain?
>
> thank you,
> Prasanna R
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