I have been using the following stack up in my designs: L1-S, L2-G, L3-S, L4-S, L5-P, L6-S Due to multiple power requirements, on layer 5, power planes are discontinuous. Also I use some power planes on layer 4. I have been using a lot of decoupling caps (for EMI reasons). As mentioned in the previous mails, I haveused as low as 10pF caps for decoupling. The caps (10p-0.1u) are being used on "hot-spots", edge of the board, edge of the planes, etc. As per Larry's mail, I would like to use 4-6mil gap between G/P in FR4 material. If I have to switch now to a different topology with adjacent P and G (say, L1-S, L2-S, L3-G, L4-P, L5-S, L6-S) what other precautions I have to take?? Will it also fix the Power bounce due to the return currents? Will it deteriorate my SI? Thanks for your advice. Vishram >From: Larry Smith >To: vishrampandit@xxxxxxxxxxx >CC: si-list@xxxxxxxxxxxxx, Charles.Grasso@xxxxxxxxxxxx >Subject: Re: [SI-LIST] Re: Power Integrity (was: UltraCAD ESR and Bypass Capacitor Caculator) >Date:Mon, 18 Aug 2003 09:11:42 -0700 >>Vishram - I agree. My general approach is to address the PI problem first >and make sure that the silicon circuits have clean power. This involves >management of capacitance and inductance at the PCB, package and chip levels. >Next, address the SI problems by making sure that all high speed signals have >a good return current path. After doing these two things, many EMI problems >will be eliminated. >>I have also been able to fix EMI problems at multiple 100's of MHz by >using decoupling capacitors. But the higher the frequency gets, the >harder it is to do this. Capacitors at this frequency usually will not affect >the quality of the power as measured at the silicon circuit terminals(PI), >but they might effect emmissions. >>After we began using thinpower plane >dielectrics, I don't believe we have found any EMI problems that can >be fixed with discrete decoupling capacitors. But if your product does >not have thin power plane dielectrics (4 mil or less) for cost or >other reasons, EMI problems can _sometimes_ be fixed with caps. If >this works, it is usually not a very robust solution. If some little >thing changes, the EMI problem often crops back up again. >>regards, >Larry Smith >Sun Microsystems >>Vishram Pandit wrote: >>>>>>Larry, >>>>Very nice explanation. PI influences SSN, and SSN influences EMI. EMI is >>influenced by PI and SI. If we have sound PI and also, reduce the SSN, then >>EMI (due to that aspect of the circuit) is mitigated. Would you agree? >>>>As mentioned in my pevious mails, I have seen improvements in EMI at higher >>frequencies (as high as 800MHz) with decoupling capacitors, and changing the >>P/G structure to improve the impedance. Your email states that PI is >>characterized by P/G impedance and decaps for PI are effective up to 100MHz. >>However, in my case, I reduced the 800MHz impedance further by decaps >>betweenP/G, and by improving the P/G strucutre, and it helped improve the >>EMI. Thus, improving PI at 800MHz improved the EMI.Apart from chaning the >>structure of P/G, decaps (value, ESL, locations) played important part in >>it. >>>>I will appreciate your comments. >>>>Thanks, >>>>Vishram Pandit >>>>Senior Member Techincal Staff >>>>Hughes Network Systems >>>>>From: Larry Smith >Reply-To: Larry.Smith@xxxxxxx >To: >>si-list@xxxxxxxxxxxxx, Charles.Grasso@xxxxxxxxxxxx >Subject: [SI-LIST] Power >>Integrity (was: UltraCAD ESR and Bypass Capacitor Caculator) >Date: Fri, 15 >>Aug 2003 14:04:39 -0700 (PDT) >>I changed the thread name to betterreflect >>the subject.. >>Some of us at Sun have begun using a different word for the >>power >distribution problem, "power integrity." Thisphrase helps to >>>distinguish three major topics: power integrity (PI), signal integrity >>>(SI)and EMI. Power integrity is the issue that Charles isaddressing >and >>signal integrity is what Kim is addressing in his very nice web >posting. A >>lot of the confusion could be eliminated by using clearer >terminology. >>I >>think of the "power integrity" problem as having only two nodes: Vdd >and >>Gnd. There are no signals involved. For the power integrity >problem, we are >>concerned with delivering many watts of power, often at >low voltage and >>highcurrent, to modern digital technology. The big >issues are transient >>current and DC loss. A good example is an >advanced micro processor that >>draws as much as 100 watts of power at 1 >volt (100 amps). The processor can >>go from an idle state to a fully >active state in just a few clock cycles (1 >>nSec). The silicon circuits >may consume 50 amps and then 100 amps just a >>fewcycles later. >Delivery ofthis 50 watt transient through the various >>timeconstants, >which range from nSec to mSec (chip, package, PCB, VRM, AC >>toDC >converter), is very much a part of the power integrity problem. Note >>>that 1 mOhm of DC resistance in this circuit consumes 10 watts of power >>>(I^2*R) and renders our delivery system only 90% efficient. Power >>>Integrityinvolves deliveringhigh current with huge transients. It is >best >>understood and managed by the concept of target impedance in the >frequency >>domain. >>Signal integrity, on the other hand, always involves signal nodes. >>A >fewyears ago, at the 50 MHz level, signal integrity basically meant >the >>waveform quality and timing on ideal transmission lines. Before >that, all >>wehad to worry about (at the 5 MHz level) was RC time >constants. Now we are >>beyond 500MHz where we must be concerned with >frequency dependent lossand >>return current paths. Several years ago, >SSN (simultaneous switch noise) >>wasmostly an L*di/dt problem that >created ground bounce in the DIP's (dual >>inline packages, lead >frames). After we started including ground planes in >>our packages, >replaced wire bonds with solder bumps and started using just >>as many >ground pins as signal pins, the SSN problem changed to a power >>plane>bounce and return current problem. This is how power integrity keeps >>>getting mixed up with signal integrity. The return current for signals >is >>on power and/or ground planes. But we can avoid a lot of confusion >if we >>usethe term "power integrity" for topics that involve just Vdd >and ground >>and reserve "signal integrity" for topics thatinvolve >signal nodes. >>>>Decoupling capacitors play a role in all threetopics. For the power >>>integrity problem, they are energy storage devices that mitigate power >>>transients. They deliver energy when the voltage droops and store >energy >>when the voltage spikes. For the signal integrity problem, they >enable >>return current to jump from one node to another (i.e. Vdd1 to >Vdd2 or Vdd >>toGnd) when packages, vias or connectorsrequire signal >return current to >>make the jump. For the EMI problem, they provide low >impedance and energy >>absorption at frequencies where the product >naturally has a lot of energy >>(clock) or frequencies where the product >has a very efficient resonator or >>radiator. >>Decouplingcapacitors are effective for the power integrity >>problem in >the 100 kHz to 100 MHz frequency band. Below 100 kHz it takes >>toomany >uF for them to be effective and above 100 MHz their inductance gets >>in >the way. However, decoupling capacitors may be used to complete return >>>currentpaths (SI) or absorb noise (EMC/EMI) up to much higher >>>frequencies.Below 50 MHz, position on the PCB is not very important >but >>above 200 MHz, position often becomes critical. Thin power plane >>>dielectricsare a good replacement for discrete decoupling >capacitors that>>are aimed at frequencies above 100 MHz. Power plane >capacitance is "broad >>band" but the Q of discrete capacitors becomes >sharp and limits their >>effectiveness as frequency increases. >>Very few topics on SI-list seem to >>evoke as many emotions as decoupling >capacitors. That is probably because >>people view them from so many >different perspectives. Vastly different >>conclusions can be drawn for >decoupling capacitors depending on the problem >>you are trying to solve >(PI, SI or EMI) and other variables such as power >>plane dielectric >thickness. Some of this can be helped by clearly defining >>the >terminology and use conditions. >>regards, >Larry Smith >Sun >>Microsystems >>>Delivered-To: si-list@xxxxxxxxxxxxx >>From: "Grasso, >>Charles">>To: "'si@xxxxxxxxxxxx'" , "'si-list@xxxxxxxxxxxxx'" >>>Subject: >>[SI-LIST] Re: UltraCAD ESR and Bypass Capacitor Caculator >>Date: Thu, 14 >>Aug2003 15:39:34 -0600 >>MIME-Version: 1.0 >>Content-Transfer-Encoding: 8bit >>>>X-archive-position: 7937 >>X-ecartis-version: Ecartis v1.0.0 >>>>X-original-sender: Charles.Grasso@xxxxxxxxxxxx >>X-list: si-list >>>>Hi >>Kim, >>First - thanks for putting the slides up on the bweb for >>all to >>see.I think that you mayhave missed the point >>a little. In your scenario >>(a signal trace switching >>planes )the location of the caps is vital. >>>>>>The discussion was centered on the location of caps >>wrt power >>distribution. The locationof the capacitors >>(within reason) will not >>affect a S11/S21 measurement >>that much. >>>>Fancy tackling that little >>problem? >>>>Best Regards >>Charles Grasso >>Senior Compliance Engineer >>>>Echostar Communications Corp. >>Tel: 303-706-5467 >>Fax: 303-799-6222 >>>>Cell: 303-204-2974 >>Email: charles.grasso@xxxxxxxxxxxx; >>Email >>Alternate:chasgrasso@xxxxxxxx >>>>------------------------------------------------------------------ >To >>unsubscribe from si-list: >si-list-request@xxxxxxxxxxxxx with 'unsubscribe'>>in the Subject field >>or to administer your membership from aweb page, go >>to: >//www.freelists.org/webpage/si-list >>For help: >>>si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field >>List >>archives are viewable at: >//www.freelists.org/archives/si-list >or at>>our remote archives: >http://groups.yahoo.com/group/si-list/messages >Old>>(prior to June 6, 2001) list archives are viewable at: >>>http://www.qsl.net/wb6tpu >>>>>>---------------------------------------------------------------------- ------ >>Tired of spam? 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