Hi, Can anyone let me know the typical values of the inter-metal-dielectric thickness (IMD) used in CMOS TSMC0.18 micron technology? Also please let me know the substrate thickness used in this process, and what are the typical values of conductivity of the substrate? Thanks, Amitava Amitava Bhaduri Research Assistant 527 ERC University of Cincinnati OH - 45220 ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List technical documents are available at: http:/www.si-list.org List archives are viewable at: //www.freelists.org/archives/si-list or at our remote archives: http://groups.yahoo.com/group/si-list/messages Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu