[nasional_list] [ppiindia] Intel creates the first continuous silicon laser beam
- From: "Ambon" <sea@xxxxxxxxxx>
- To: <"Undisclosed-Recipient:;"@freelists.org>
- Date: Sat, 19 Feb 2005 01:28:31 +0100
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http://newsfromrussia.com/science/2005/02/18/58317.html
Intel creates the first continuous silicon laser beam
02:17 2005-02-18
Researchers from Intel Corp. have announced that they have created the first
continuous laser beam using silicon components that may signify advances in
communications and medicine.
Such a laser could make high-bandwidth, light-based communication feasible for
not only the connections between computers but also the links between
components inside PCs. It also could slash the cost of lasers used in defense,
medicine and other industries, reports Xinhua News.
In a paper to be published today in the journal Nature, Intel's Photonics
Technology Laboratory reports a way to overcome the primary hurdle to using
silicon as a medium for laser light, an effect in which electrons freed by the
energy of passing photons absorb the light as it passes through.
Researchers at the world's largest maker of microchips overcame that problem,
called two-photon absorption, by using a technique from the world of
semiconductors. It created positive and negative regions around the path of the
laser light, which "vacuum" away electrons and provide a clear road for the
laser.
Bahram Jalali, a professor of electrical engineering at the University of
California in Los Angeles who has also done work with silicon lasers, said
Intel's laser holds promise as the basis for defense applications, as in
infrared jamming devices to defend against heat-seeking missiles, informs the
Houston Chronicle.
According to the Information Week, Intel claims to have made another
breakthrough in the arena. "Because of the nonlinear optical loss associated
with two-photon absorption (TPA)-induced free carrier absorption (FCA), until
now lasing has been limited to pulse operation," according to Intel.
"Specifically, we show that TPA-induced FCA in silicon can be significantly
reduced by introducing a reversed-biased p-i-n diode embedded in a silicon
waveguide."
The laser is built around a low loss SOI rib waveguide, whose facets are coated
with multilayer dielectric films. "The silicon rib waveguide is fabricated on
the surface of an undoped SOI substrate using standard photolithographic
patterning and reactive ion etching techniques," according to Intel's
description in Nature. "The p-i-n structure was formed by implanting boron and
phosphorous in the slab on either side of the rib waveguide."
JB
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