Hi All SI Friends: I am doing an analysis about xxx chipset on motherboard. From this chipset design guide, it claims high byte signals for DDR memory (they have longer trace length) should be routed for variant width. I think this has some thing to do with long trace. Trace's width increased gradually if total length on PCB over some spec. I know that inductance will affect the SI and timing dominantly in microstrip structure, so narrower trace will have higher inductance when trace is long ( I found that there exist ledge on rising edge when width is narrow). So increase trace width will decrease inductance under the same length. I found that high and low time of input signal will become smaller, there leaves less margin for setup and hold time. So I think this is the reason why it needs variant width designed. But I wonder that why reflection voltage could be neglected? I estimate that amplitude of reflection voltage is around 450mV. This quantity is larger related to DDR signal. I can't proceed a detail calculation further, but why reflection voltage will not degrade the timing but inductance does in this case. Can anyone propose any suggestion or comment? Thanks! Jack ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List archives are viewable at: //www.freelists.org/archives/si-list or at our remote archives: http://groups.yahoo.com/group/si-list/messages Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu