Hello SI Gurus, I am doing my first design with an SSTL-2 DDR memory. I will be using a single or maximum two memory chips in point-to-point application. The trace length is expected to be less than 2 inches. Here are my questions regarding this design: 1) The memory vendor describes two modes for memory application: Reduced Drive, and Impedance Match. What are the advantages and drawbacks of these two modes, and which one is preferable. 2) For the length of interconnect, do I need both series and parallel terminations, or can I get away with only one type. The ASIC interfacing with the memory has its drivers designed for 50 ohms. My board space is severely limited, and I would like to keep the number of terminations to a minimum. 3) Which is the better simulation method. I have choice of using HyperLynx or PSPICE. If I choose PSPICE, which is the better way of extracting driver impedance and rise time from the IBIS model. 4) I will be getting 2.5V from a switching regulator. Can I use a potential divider to get Vref from 2.5V, or should I use a separate linear regulator. Again, board space is at a premium. 5) Any other relevant design issue. All comments will be appreciated. Regards, Ravinder PCB Development and Design Department IBM Corporation Email: ajmani@xxxxxxxxxx *************************************************************************** Always do right. This will gratify some people and astonish the rest. .... Mark Twain ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List archives are viewable at: //www.freelists.org/archives/si-list or at our remote archives: http://groups.yahoo.com/group/si-list/messages Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu