[SI-LIST] Can anybody help me out?! about the quality factor of inductor
- From: "eegjf" <eegjf@xxxxxxxxx>
- To: <si-list@xxxxxxxxxxxxx>
- Date: Tue, 9 Dec 2003 17:31:23 +0800
Dear All,
I am doing the simulation and measurement of spiral inductor on silicon.
Based on C. P. Yue's paper (IEDM96), there are two configurations of
lumped-element model of spiral inductor on silicon: one port configuration
with one end grounded and two port configuration. When I do the S- parameter
simulation using ADS, I got two different results of quality factor.
Case I: (one port simulation)
One end connected with 50ohm terminal and the other end with ground.
Case II: (two port simulation)
Z11=2*50*S11/(1-S11)
Q=imag(Z11)/real(Z11)
This is what I saw in one paper on IEDM 97.
Case III: (two port simulation)
Both ends connected with 50ohm terminal. The quality factor was calculated as:
Sp=S11-S12*S21/(1+S22)
Z=50*(1+Sp)/(1-Sp)
Q=imag(Z)/real(Z)
This is what I saw in one post in this list.
Case I and Case III give the same results but case II gives different and much
worse
result (only half of quality factor value of Case I and III). So which one is
the RIGHT way to do it?
I feel more confused after I followed some papers' example and checked my
simulated results with
their measured results. I found other peoples' one-port measurement results
were close to the
Case II simulation instead of Case I. What's wrong with this?
Please Please help me out!!
Thank you so much
Johnson
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