[SI-LIST] Re: SEU caused by laser illumination
- From: steve weir <weirsi@xxxxxxxxxx>
- To: Huiyun.Li@xxxxxxxxxxxx, <si-list@xxxxxxxxxxxxx>
- Date: Mon, 04 Jul 2005 13:11:09 -0700
Huiyun, pardon my ignorance here, but aren't we just talking about
photoelectric effect? Unless you can really focus that LASER down to hit a
single target junction, I suspect you are seeing more of a ground bounce
phenomenon than anything else.
Steve.
At 02:38 PM 7/4/2005 +0100, Huiyun Li wrote:
>Hi there,
>
>I have a question about SEU (single-event-upset) in CMOS, hope it's relavent
>to at least one of the SI-list topics.
>
>I've been working on security/attacks on microprocessors, and is currently
>working on the laser illumination attack, which causes ionization in silicon
>and may change the state of the struck nodes, just as in a SEU caused by
>heavy ions.
>
>We got some experiment results (like reliably setting a register value to 0,
>etc), which can be explained by the assumption that the radiation attack is
>more
>effective at turning on n-type transistors than their p-type counterparts.
>However I can't find any references in SEU to prove this assumption, except
>in some destructive effects (e.g. as for single event burnout (SEB), NMOS
>are more sensitive to SEB than PMOS. bacause the impact ionization rate is
>larger for electrons than for holes) .
>
>I know bulk silicon has some different properties from epitaxial design in
>aspect of SEU. Dopant concentrations may also affect the ionization rate.
>Does it mean that there is no solid rule about turning on n-type and p-type
>with laser illumination?
>
>Huiyun Li
>Computer Laboratory
>University of Cambridge
>JJ Thomson Avenue
>Cambridge CB3 0FD, UK
>
>
>
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