I think one of the problems here is that like with most myths or urban legends, there is a kernel of truth to it. It is pure, unarguable physics that the capacitance will go down and the inductance will go up in a right angle bend. The question is whether that change matters in a particular application. For some applications, like in high power microwave or RF applications, this effect can be significant enough relative to other factors that it is definitely worth worrying about. But in the grand scheme of things in the current SI world, this change is way down on the list of potential problems. It is effectively swamped out by many other effects (like our relatively crappy connectors, for one example...) I think these guys wrote a pretty decent little paper with some math that can help determine whether you might need to worry about bends. http://www.millertechinc.com/pdf_files/mti_tn063_microstrip_right_angle_bends.pdf Also keep in mind that we in the SI world are mostly dealing with pulsed signals, where a large portion of the energy is contained in the lower frequency components. The excess capacitance will only affect the very high frequency components. But in the microwave environment, it's all about the high frequency signal, so a bend can be a much greater concern. Julian Ferry High Speed Engineering Manager Samtec, Inc -----Original Message----- From: si-list-bounce@xxxxxxxxxxxxx [mailto:si-list-bounce@xxxxxxxxxxxxx] On Behalf Of Brad Brim Sent: Friday, July 15, 2011 2:57 PM To: 'Jeff Walden'; si-list@xxxxxxxxxxxxx Subject: [SI-LIST] Re: Right Angle Bends exactly, Jeff ... and the traces that connect to the bends are also MUCH longer than typical for the RF/microwave case. In RF/mw ckt sim libraries/layouts a bend is a separate "component". The reference planes (i.e. where the traces connect to the bend) are at the edge of this component. For example, the 90-degree bend reference planes are at the edge of the square representing the area of the bend. For most SI applications the bend is NOT a separate component and the two traces simply meet at a single node. Having worked way too many hours to implement and test RF/mw ckt sim bend models over a dozen years ago I observed the parasitics are a delay of length on the order of the node-to-node distance with additional capacitive parasitics for sharp bends and inductive parasitics for aggressively chamfered bends. For a 90 degree bend the different definitions of reference plane imply 2*(W/2) additional length trace for the SI case. Given approximate parasitic delay of sqrt(2)*W/2, all implies doing nothing for SI applications is still on the order of only 30% phase delay error versus a much more precise parasitic model (for an already small parasitic). The phase delay dominates because bend capacitive parasitics are small for SI apps relative to other capacitive parasitics not modeled throughout the system. Therefore, if the trace are not wide (low impedance) and their lengths coming in/out of the bend are long relative to the linewidth, then ignoring the bend is obviously the correct choice. Where SI apps might not always want to ignore bends is for tight meander structures used to accumulate phase delay and balance skew. These geometries sometimes have short distance between bends and could therefore lose some accuracy from ignoring bend parasitics. In these cases it is probably more important to include coupling amongst the parallel traces. As we all might guess, if you need to know a meander behavior accurately you may wish to model it as a single component with more detailed simulation rather than treat it as a collection of traces (with or without bend parasitics). cheers, -Brad > -----Original Message----- > From: si-list-bounce@xxxxxxxxxxxxx > [mailto:si-list-bounce@xxxxxxxxxxxxx] On Behalf Of Jeff Walden > Sent: Friday, July 15, 2011 10:55 AM > To: si-list@xxxxxxxxxxxxx > Subject: [SI-LIST] Re: Right Angle Bends > > The difference is that today's SI traces are significantly > narrower than the typical "RF" microstrip of 30 years ago. > -Jeff > > ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List technical documents are available at: http://www.si-list.net List archives are viewable at: //www.freelists.org/archives/si-list Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List technical documents are available at: http://www.si-list.net List archives are viewable at: //www.freelists.org/archives/si-list Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu