[SI-LIST] R: Input Impedance Changing
- From: <gianguida@xxxxxxxx>
- To: <yangrui@xxxxxxxxxxxxxxxxx>, "SI-List" <si-list@xxxxxxxxxxxxx>
- Date: Fri, 7 Apr 2006 08:20:37 +0200
Hi Yang,
this seems a perfect topic to rfeply
after the post on Theory vs practice
about model and its validity...:-))))))
I would say that you have two main possibility
make a rough ( that does not mean bad) evaluation of
your problem based on experfience or
invest part of your work to use a simulator
and create a valid model.
The benifits of your investment are:
1) a better understanding of effects to put some new layer....
2) reuse of the model for next design
3) a tool to explore your problem
At the endo of the day
i would say that you need a simulator...:-))))
Giancarlo
-----Messaggio originale-----
Da: si-list-bounce@xxxxxxxxxxxxx per conto di Yang Rui
Inviato: ven 07/04/2006 6.54
A: SI-List
Oggetto: [SI-LIST] Input Impedance Changing
Hi, ALL,
We had one RFIC with two pads (top layer), the IC works at 2.45 GHz, the
input impedance was 27+180i. The IC was passivated with Si3NI4 layer
with thickness 0.3um. The input impedance measurement was done with GS
probe (The IC does not have global GND). Now we are doing
post-processing of this IC, one more SiO2 layer (thickness 0.3um) was
created on top of Si3Ni4 layer, and one more Al redistribution layer was
deposited on SiO2 layer, the connection to those two pads are brought up
through two vias. My question is that how much will the input impedance
change after inserting this metal layer, what will happen if I short one
via to the Al layer which will be treated as the GND?
Thank you and Regards,
Yang
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