[SI-LIST] Modeling of varactor in CMOS process Upto 10G
- From: Neo <neoflash2008@xxxxxxxxx>
- To: si-list@xxxxxxxxxxxxx
- Date: Mon, 7 Apr 2008 07:19:51 -0700 (PDT)
Hi, folks:
I have a question on the modeling of RF varactors (nmos in nwell) in TSMC
0.18um RF PDK. It is related with high-frequency measurement and
characterization, so it should be helpful to consult SI friends.
If we take a look at the RF model, we will find that Rg and Rds element is in
series with the variable capacitor. However, I'm not sure whether it fully
modeled the loss of the varactor.
1. the Rg and Rds is not related to Vgb of the varactor. This doesn't match
the reality that changing the Vgd will change the series resistance of Nwell.
2. I'm not sure how well it is correlated with measurement.
Since I will use the varactor in very high frequency VCO (10g), and the
quality factor of the varactor is very important. Please comment on this.
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