Hi, ALL, We had one RFIC with two pads (top layer), the IC works at 2.45 GHz, the input impedance was 27+180i. The IC was passivated with Si3NI4 layer with thickness 0.3um. The input impedance measurement was done with GS probe (The IC does not have global GND). Now we are doing post-processing of this IC, one more SiO2 layer (thickness 0.3um) was created on top of Si3Ni4 layer, and one more Al redistribution layer was deposited on SiO2 layer, the connection to those two pads are brought up through two vias. My question is that how much will the input impedance change after inserting this metal layer, what will happen if I short one via to the Al layer which will be treated as the GND? Thank you and Regards, Yang **************************************************************************** This email is confidential and may be privileged. If you are not the intended recipient, please delete it and notify us immediately. Please do not copy or use it for any purpose, or disclose its contents to any other person. Thank you. **************************************************************************** ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List FAQ wiki page is located at: http://si-list.org/wiki/wiki.pl?Si-List_FAQ List technical documents are available at: http://www.si-list.org List archives are viewable at: //www.freelists.org/archives/si-list or at our remote archives: http://groups.yahoo.com/group/si-list/messages Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu