[SI-LIST] IC Corners and Etch Corners
- From: Brianna.Bethel@xxxxxxxxxxxx
- To: si-list@xxxxxxxxxxxxx
- Date: Thu, 13 Apr 2006 13:25:53 -0600
Hi! I'm just beginning to experiment with SI Simulation tools (specifically
SiSoft) and I noticed to run a simulation you need to select corner and etch
options conditions. The options are slow, typical, and fast corners and slow,
typical and fast etch, and combinations of the two.
I was wondering if someone could explain to me how these options relate to the
simulation, and what methods are used to decide which options to use. In
other words, a big picture overview would be very helpful.
I did read that the corner options select temperature and voltage factors, and
the etch selects propagation delay and impedance factors, but that's about all
I understand so far.
Thanks!
Brianna Bethel
University of Colorado - Boulder
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