Vadim, you could contact the DRAM applications departments to find the answer. Here is what I recall from taking such measurements two years ago: VDDQ can be 20 pF per DQ. A 32 DQ DRAM might measure 640 pF. The 20 pF is due to one-die decoupling capacitors. These capacitors are a mixed blessing and chosing the value incorrectly can create EMI issues. The VDD capacitance should vary with frequency and whether the DRAM is active or not. In quiescent mode at 1 MHz I have measured a few nanofarads, if I remember correctly. Dave Cuthbert Consultant ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List technical documents are available at: http://www.si-list.net List archives are viewable at: //www.freelists.org/archives/si-list or at our remote archives: http://groups.yahoo.com/group/si-list/messages Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu