[SI-LIST] Re: 0306 Capacitors
- From: steve weir <weirsp@xxxxxxxxxx>
- To: "Istvan NOVAK" <istvan.novak@xxxxxxxxxxxxxxxx>
- Date: Sun, 14 Mar 2004 08:31:29 -0800
Istvan, yes if we change ID alone then your point is taken, but to do that
means that we started out with an excessive OD, which is just the same as
moving the via away from the device pad for no reason. My assumption is
that we would never use excessive OD annular rings. So, ID and OD
track. Is there a good reason that we would not track ID and OD at the
economic sweet spot of our fabrication capability?
Regards,
Steve
At 10:24 AM 3/14/2004 -0500, Istvan NOVAK wrote:
>Steve,
>
>I think I start to understand where we differ. The ln(R)
>term still refers to the cylinder itself. My comment
>referred to (but I probably was not clear about it) the
>inductance of the pad between the cylinder of via to
>the edge/periphery of the pad, or the connection line
>of capacitor body, whichever is closer to the via
>cylinder. When the cylinder gets bigger, the horizontal
> inductance of the same pad gets lower.
>
>Regards,
>Istvan
>
>
>
>
>----- Original Message -----
>From: "steve weir" <weirsp@xxxxxxxxxx>
>To: "Istvan NOVAK" <istvan.novak@xxxxxxxxxxxxxxxx>
>Cc: <si-list@xxxxxxxxxxxxx>
>Sent: Saturday, March 13, 2004 9:41 PM
>Subject: Re: [SI-LIST] Re: 0306 Capacitors
>
>
> > Istvan, if we apply Biot-Savart, the inductance of the surface
> > cross-section grows with diameter. As we increase the diameter, the
> > incremental area of each circumference slice gets bigger, helping
> > inductance, but the radius also similarly increases. We end-up
>integrating
> > dr/R which returns a natural log function.
> >
> > Regards,
> >
> >
> > Steve.
> > At 09:12 PM 3/13/2004 -0500, Istvan NOVAK wrote:
> > >Steve,
> > >
> > >Assuming a square pad and a circular via in its center:
> > >if we increase the diameter of the via, dont we have
> > >a shorter distance from the edge of the pad to the via tube?
> > >
> > >Regards,
> > >Istvan
> > >
> > >
> > >----- Original Message -----
> > >From: "steve weir" <weirsp@xxxxxxxxxx>
> > >To: "Istvan NOVAK" <istvan.novak@xxxxxxxxxxxxxxxx>
> > >Cc: <si-list@xxxxxxxxxxxxx>
> > >Sent: Saturday, March 13, 2004 5:34 PM
> > >Subject: [SI-LIST] Re: 0306 Capacitors
> > >
> > >
> > > > Sure, looking from the connecting edge of the via pad to the center
>where
> > > > it meets the top of the tube, the inductance increases with the OD.
>It is
> > > > a pretty straightforward application of Biot-Savart.
> > > >
> > > > Regards,
> > > >
> > > >
> > > > Steve.
> > > > At 11:24 AM 3/13/2004 -0500, Istvan NOVAK wrote:
> > > > >Steve,
> > > > >
> > > > >I am not sure I agree with your following statement in the context we
> > >have
> > > > >here
> > > > >(connecting component pads to planes). Can you elaborate?
> > > > >
> > > > >
> > > > > > 1) A larger via radius increases the partial inductance on the
>surface
> > >by
> > > > > > ln( radius ).
> > > > > >
> > > > >
> > > > >Regards,
> > > > >Istvan
> > > >
> > > >
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