The following information includes Solar PV Breeder webpage links, and exerpts from same links. Electromagnetic casting generates silicon PV ingots at the lowest enrgy costs and fastest rates of all systems known today. The original patent expires in three years. Licencing of use of the patent can allow sooner use. The EMC process is the heart of the proposed "Solar PV Breeders" technology providing the low-cost solar panels needed for Palaces For The People power systems autonomy. Palace PV breeders will grow PV wafers and thereby earn the payoff of the cost of their initial solar power equipment in the first year of operation. Further years provide an income stream to the Palace as additional Palaces are equipped at a rate of one per year. http://www.nrel.gov/silicon/EMC.htm Electromagnetic Casting We discovered and patented the semicontinuous electromagnetic cold-crucible casting technique for silicon in the mid-1980s (Theodore F. Ciszek, "Method and Apparatus for Casting Conductive and Semiconductive Materials," U.S. Patent 4,572,812, 1986. This method has a higher throughput than any other Si ingot technology, because of the easy heat transfer to a cold environment. A trade-off is that grain size is small because of the rapid cooling. However, the purity level is very high because this is essentially a "containerless" method. All things considered, the method makes >13%-efficient production cell efficiencies at a high throughput. While it has not caught on in the US, it has been more vigorously developed in Europe and Japan, where ingots weighing over 190 kg with cross sections of 22 x 22 cm are produced. http://www.nrel.gov/silicon/Nmulticrs.htm Electromagnetic casting (EMC), shown here, has some similarities to the casting and DS methods just described, but also has several unique features that change the ingot properties and warrant a separate discussion. The method was first applied to semicontinuous silicon ingot casting by Ciszek (1985, 1986). EMC is based on induction-heated cold-crucible melt confinement, except that unlike the conventional cold crucible, there is no crucible bottom. A parallel, vertical array of close-spaced, but not touching, water-cooled, conducting fingers is attached at one end to a water-cooling manifold. The other end of each finger is closed. An internal distribution system carries cooling water to the tip and back again. The shape of the region enclosed by the close-spaced fingers determines the cross section of the cast ingot, and a wide variety of shapes are possible (circular, hexagonal, square, rectangular, etc.). Silicon is melted on a vertically moveable platform (typically graphite) located within the finger array. The melting is accomplished by induction heating after suitable preheating. The induction coil, placed outside the finger array, induces a current to flow on the periphery of each finger, around the finger's vertical axis. Like a high-frequency transformer, each finger in turn induces a current to flow in the periphery of the silicon charge, about its vertical axis. The silicon is heated by its resistance to the current flow. There is Biot and Savart-law repulsion between the current flowing in the periphery of the silicon melt and the currents flowing in the fingers, because they are induced to flow in opposite directions at any particular instant in the RF cycle. Thus, the melt is repulsed from the water-cooled fingers. The open-bottom arrangement allows the platform to be withdrawn downward, solidifying the molten silicon, while new melt is formed by introducing feed material from the top. In this way, a semicontinuous casting process can be carried out. A variety of feed silicon geometries can be used (melts, rods, pellets, scrap, etc.). Because the interface is submerged, feed perturbances or slag at the melt surface do not affect the solidification front. Ingot lengths of 3 m have been demonstrated. The cross section of the ingots has evolved over years of development and is currently about 350 mm x 350 mm. The cold fingers allow steep thermal gradients and fast growth speeds (~1.5-2.0 mm/min), even in ingots with large cross sections. But they also cause a steeply curved interface that is concave toward the melt. Thus, grains are neither as columnar nor as large as in conventional DS. The average grain size is on the order of 1.5 mm in large ingots. This decreases t, but the relatively high purity and freedom from oxygen and carbon impurities (O < 6x1015; C < 8x1016) largely offset the grain-size effect, so that solar cell efficiencies of about 14%-15% are obtained on 15 cm x 15 cm cells. The throughput of EMC is the highest of any ingot growth technique - up to approximately 30 kg/h. The power consumption is about 12 kWh/kg. http://www.nrel.gov/silicon/Nfuture.htm Future Trends in Silicon PV Materials Technology ... Multicrystalline casting, directional solidification, and electromagnetic casting are commanding an increasing share of the Si PV market (53% of all ingot ... www.nrel.gov/silicon/Nfuture.htm - 13k - Sep 14, 2003 http://www.nrel.gov/silicon/NCompGr.htm Silicon Crystal Growth Methods - A Comparison ... For example, the highest throughput ingot method, electromagnetic casting, yields lower cell efficiencies than the slower CZ growth method because of smaller ... www.nrel.gov/silicon/NCompGr.htm - 56k - Sep 14, 2003 http://www.nrel.gov/silicon/industry.htm Silicon Materials Research with Industry at NREL ... a "containerless" silicon feedstock particulate consolidation system based on our cold-crucible electromagnetic semicontinuous casting process (Theodore F ... www.nrel.gov/silicon/industry.htm - 10k - Sep 14, 2003 http://www.nrel.gov/docs/fy01osti/30280.pdf PDF]Solar Electricity: The Power of Choice, Second Quarter 2001 File Format: PDF/Adobe Acrobat ... There are also 140 patents, spanning materials innovation (such as electromagnetic Si casting, new transparent con- ducting oxides), through devices (GaInP/GaAs ... www.nrel.gov/docs/fy01osti/30280.pdf http://www.chem.uu.nl/nws/www/publica/95057.htm Summary 'Environmental life-cycle assessment of multicrystalline ... ... conventional casting, electromagnetic casting, ... Environmentally relevant substances which may be released in multicrystalline silicon PV module production are ... www.chem.uu.nl/nws/www/publica/95057.htm http://www.sumitomocorp.co.jp/o-hitetsu/emcsolar.htm EMC SOLAR GRADE POLY CRYSTAL SILICON WAFER ... effective manufacturer of high quality polycrystal silicon wafer for photovoltaic (PV) industry. The method of wafer production is Electromagnetic Casting (EMC ... www.sumitomocorp.co.jp/o-hitetsu/emcsolar.htm - 9k http://www.ecotopia.com/apollo2/pvepbtne.htm Energy Pay-Back Time (EPBT) and CO2 mitigation potential ... silicon process in combination with electromagnetic casting of mc ... Because the (energy) costs of silicon are virtually ... will improve only when the PV market is ... www.ecotopia.com/apollo2/pvepbtne.htm - 17k ===== - - - - - - - - - - - - - - - - - - - Sincerely, Lion Kuntz Santa Rosa, California, USA - - - - - - - - - - - - - - - - - - - http://groups.yahoo.com/group/Palaces4People/ http://groups.yahoo.com/group/Palaces4Japan/ http://www.ecosyn.us/ecocity/Proposal/Palaces_For_The_People.html http://www.ecosyn.us/ecocity/Challenges/Asia_Floods/Wet/All_Wet.html http://www.ecosyn.us/Interesting/ - - - - - - - - - - - - - - - - - - - __________________________________ Do you Yahoo!? Yahoo! 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