All, IBIS is (was) a measurement based standard. One assumption is that the VT curves should be measured at an accessible probe point (e.g. die pad or component pin). Since IBIS models are now often generated from simulation, the VT curves can be generated wherever the SPICE deck allows a probe which can be at or even inside the buffer on the silicon. If we implement a Final Stage circuit to be inserted between the "B" element and the on-die/package interconnect, what C_comp (C_comp_KT) should the EDA tool use to generate the KT functions that turn on and off the Driver Pullup and Pulldown circuitry? The idea suggested here and in the enclosed slide is to allow IBIS ISS subckts to be defined between the legacy IBIS B element, and the buffer terminal, and to add a new IBIS parameter C_Comp_KT. The EDA tool uses C_Comp_KT to generate the KT functions, but uses C_comp (and the Final Stage subckt) during simulations. Walter Walter Katz <mailto:wkatz@xxxxxxxxxx> wkatz@xxxxxxxxxx Phone 303.449-2308 Mobile 303.335-6156
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