Hello all, May I raise a question to all of you, as you know, Intel does more constraints restrictions than any other semiconductor vendor especially in MCH platform design guide (PDG). For example, in DDR2 control group signal constraints (CKE, CS and ODT signals) of Intel Bigby 3210 MCH chipset, the characteristic trace impedance of the DDR2 control group signals from MCH to Channel A dimms is 37Ohm+/-15%, however the characteristic trace impedance from MCH to Channel B dimms is 28Ohm+/-10%. The traces of Channel B dimms are longer than Channel A dimms. My question are, 1, why is the trace characteristic trace impedance of Channel A dimms different from impedance of Channel B dimms. 2, I checked the IBIS model, the output buffer model of Channel A dimms is the same as model of Channel B dimms, they are 38.9Ohm (I got this from IBIS VI curves), so it is not the reason of buffer output impedance. 3, I do not think the trace impedance's difference is because of trace distance difference between Channnel A and Channel B, 37Ohm and 28Ohm are big gaps. 4, PCB manufactory gave us feedback that they can not control trace impedance within 28Ohm+/-10%, what they can do is controlling impedance within 28Ohm+/-5Ohm, how to evaluate this impact? can we confirm with manufactory that controlling impedance within 28Ohm+/-5Ohm is ok or not. I appreciate if you have any hints on this. Harrison ------------------------------------------------------------------ To unsubscribe from si-list: si-list-request@xxxxxxxxxxxxx with 'unsubscribe' in the Subject field or to administer your membership from a web page, go to: //www.freelists.org/webpage/si-list For help: si-list-request@xxxxxxxxxxxxx with 'help' in the Subject field List technical documents are available at: http://www.si-list.net List archives are viewable at: //www.freelists.org/archives/si-list Old (prior to June 6, 2001) list archives are viewable at: http://www.qsl.net/wb6tpu