[SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- From: "Inmyung Song" <imsong@xxxxxxxxxxxxxx>
- To: <si-list@xxxxxxxxxxxxx>
- Date: Wed, 28 Nov 2001 09:52:24 +0900
We used the buried(embedded) capacitance form Sanmina.
But one problem was there.
That was the power split.
In case 2.5V and 5.0V is located at same plane which is buried(embedded)
capacitance.
We didn't know how much area did they have in that plane.
Does anyone know the split theory about the buried(embedded) capacitance
plane.
Thank you so much.
Inmyung
>
>-----Original Message-----
>From: Ron Miller [mailto:rmiller@xxxxxxxxxxx]
>Sent: Tuesday, November 27, 2001 10:36 AM
>To: si-list@xxxxxxxxxxxxx; rfmeas@xxxxxxxxxxxxxxxxxxxxxxx
>Subject: [SI-LIST] Sanmina patent on dielectric thicknesses under 4 mils
>
>
>Hi Guys
>
>I am up against the problem of using thinner dielectric in order to
>eliminate the need for sub-1000 pf bypass capacitors.
>
>While this technique was used for many years some idiot at the patent
>office actually gave them a patent for it. No novelty at all but
>standard practice.
>
>Is anyone else having trouble with this?
>
>Does anyone have published articles or books that document this use prior
>to 1989?
>
>If so, please let me know. Perhaps a consortium of industry professionals
>can help to remove this travesty of the patent system.
>
>Ron Miller
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- References:
- [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- From: Chris Padilla
Other related posts:
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- » [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- » [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- » [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- » [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- » [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- [SI-LIST] Re: Sanmina patent on dielectric thicknesses under 4 mi ls
- From: Chris Padilla