[SI-LIST] Re: MOS cap on chip for DECOUPLING
- From: Bi Han <mike_bihan@xxxxxxxxxxxx>
- To: List` Si <si-list@xxxxxxxxxxxxx>
- Date: Thu, 24 Jul 2003 10:14:27 +0800 (CST)
Thanks for everyone's valuable inputs.
That's helpful for understand the mos caps. Because I may have to use it in
high speed chip, Can anyone talk something about their high frequency property?
Thanks!
BH
While some gurus have already contributed very good analysis on this issue,
I would like to contribute to a more subtle one. For some process the N+
diffusion connected to VCC or P+ connected to VSS may be a problem
during ESD stress. The reason is the ESD current might be encouraged
to flow into that diffusion from the substrate/Well and might burn the
metal contact during ESD stress. This is layout dependent and you have
to consult your process people about the appropiate layout design rules.
Regards,
Raymond
Bi Han on 23/07/2003 18:50:13
Please respond to mike_bihan@xxxxxxxxxxxx
To: List` Si
cc: (bcc: Raymond Leung/sdc)
Subject: [SI-LIST] MOS cap on chip for DECOUPLING
Hi, experts:
In CMOS technology, what's the difference between using MOS cap as VCC
decoupling in three different ways?
1. NMOS --> gate to VCC, other three nodes to VSS (inversion)
2. PMOS --> gate to VCC, other three nodes to VSS (accumulation)
3. PMOS --> gate to vss, other three nodes to VCC ( inversion)
What's their difference in High frequency application such as high speed
limiting amplifier?
Thanks!
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