[SI-LIST] AW: Lower epsilon achieves lower crosstalk
- From: "Havermann, Gert" <Gert.Havermann@xxxxxxxxxxx>
- To: "Liu Xike" <xike.silist@xxxxxxxxx>, si-list@xxxxxxxxxxxxx
- Date: Thu, 11 Nov 2010 09:52:41 +0100
Hello Liu,
I think you answered your question pretty well. I personally like to phrase it
different: "lower dk increases density". Of coarse it means the same, as
reduced s-talk allows denser routing, but from a design prospective it makes
more sense. I start to think about materials very early in the design phase. At
this early stage I'm not trying to reduce x-talk, I'm trying to save Layers
(cost), and thats a matter of routing density.
BR
Gert
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-----Ursprüngliche Nachricht-----
Von: si-list-bounce@xxxxxxxxxxxxx [mailto:si-list-bounce@xxxxxxxxxxxxx] Im
Auftrag von Liu Xike
Gesendet: Donnerstag, 11. November 2010 07:47
An: si-list@xxxxxxxxxxxxx
Betreff: [SI-LIST] Lower epsilon achieves lower crosstalk
We could achieve lower crosstalk by using dielectric with lower permittivity,
while keeping *Z0* as a constant.
I'm new in SI, my understanding about this question is:
If we use dielectric with lower permittivity while keeping *Z0* as a constant.
We need to reduce *h *to maintain a constant *C*, because *C*= *epsilon***w*
/*h*, and *Z0*=1/*vp*/*C*.
Since *Z0* = sqrt(*L/C*), to keep* Z0* as a constant, the stripe line need to
adjust it's current distribution to maintain a constant *L*.
Considering the loop area decrease because *h* is reduced, the current
distribution should be more tighter to maintain a constant *L*.
Finally the tighter current distribution on the returning pass results in the
reduction of the cross talk.
Are these correct? I will appreciate your help
Best Regards
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