[SI-LIST] Re: 10-Layer Stack up
- From: steve weir <weirsi@xxxxxxxxxx>
- To: stephen.peters@xxxxxxxxx, "Muranyi, Arpad" <arpad.muranyi@xxxxxxxxx>, <si-list@xxxxxxxxxxxxx>
- Date: Mon, 23 May 2005 13:24:32 -0700
Stephen, B increases in a superconductor. The skin depth of a perfect
conductor is zero, sic very high L.
Regards,
Steve
At 12:12 PM 5/23/2005 -0700, Peters, Stephen wrote:
>Serious question - is a superconductor non-inductive? Just curious...
>
>Regards,
> Stephen Peters
> Intel Corp.
>
>
>-----Original Message-----
>From: si-list-bounce@xxxxxxxxxxxxx [mailto:si-list-bounce@xxxxxxxxxxxxx]
>On Behalf Of Muranyi, Arpad
>Sent: Monday, May 23, 2005 12:04 PM
>To: si-list@xxxxxxxxxxxxx
>Subject: [SI-LIST] Re: 10-Layer Stack up
>
>Couldn't someone finally invent a non-inductive
>conductor?!?!? - Just a joke... :-)
>
>Arpad
>=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D=
>3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D
>=3D3D=3D
>=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D=
>3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D=3D3D
>
>-----Original Message-----
>From: si-list-bounce@xxxxxxxxxxxxx [mailto:si-list-bounce@xxxxxxxxxxxxx]
>=3D On Behalf Of steve weir
>Sent: Monday, May 23, 2005 11:55 AM
>To: tmcgonigle@xxxxxxxx; sunil_bharadwaz@xxxxxxxxx; =3D
>si-list@xxxxxxxxxxxxx
>Subject: [SI-LIST] Re: 10-Layer Stack up
>
>Thomas, contrary to popular folklore, the main benefit of a thin =3D
>sandwich=3D20 is not more capacitance but lower inductance.
>
>If you have any doubts, consider that with a high Er dielectric you =3D
>could=3D20 achieve equivalent plane cavity capacitance with a much =
>thicker
>=3D dielectric=3D20 but also much higher inductance. I believe that if =
>you
>model that, it =3D will=3D20 become clear to you that Larry Smith's =
>battle
>cry: "It's the inductance =3D
>
>stupid!" is on the mark.
>
>It is low inductance that presents a low impedance to high=3D20
>frequencies. The planes present a lower inductance than the bypass=3D20
>capacitors, but for it to be useful as a shunt on its own through =
>the=3D20
>cavity capacitance, you have to cross the AR created by the cavity with
>=3D the=3D20 discrete bypass capacitors. Because of the problems that
>presents we =3D have=3D20 seen many proposals to try and find better
>damping, whether it be any of =3D
>
>the resistive techniques or high ESR capacitors that Istvan has =3D
>proposed,=3D20 or raising the net ESR of the discrete network using
>Larry's F^N=3D20 technique. Since by and large most people do not use =
>any
>of the =3D techniques=3D20 either Istvan or Larry have proposed to solve
>that problem, they live =3D with=3D20 it for better or for worse. Under
>those conditions, more capacitance =3D can=3D20 be as much of a problem =
>as
>it can be a benefit. But lower inductance =3D helps=3D20 no matter =
>what.
>
>Steve.
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- References:
- [SI-LIST] Re: 10-Layer Stack up
- From: Peters, Stephen
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- [SI-LIST] Re: 10-Layer Stack up
- From: Peters, Stephen